MojoKid writes: Today at a press conference in San Francisco, Intel and Micron unveiled 3D XPoint (Cross Point) memory technology, a non-volatile memory architecture they claim could change the landscape of consumer electronics and computer architectures for years to come. Intel and Micron say 3D XPoint memory is 1000 times faster than NAND, boasts 1000x the endurance of NAND, and offers 8-10 times the density of conventional memory. 3D XPoint isn’t electron based, it’s material based. The companies aren’t diving into specifics yet surrounding the materials used in 3D XPoint, but the physics are fundamentally different than what we’re used to. It’s 3D stackable and its cross point connect structure allows for dense packing and individual access at the cell level from the top or bottom of a memory array. Better still, Intel alluded to 3D XPoint not being as cost-prohibitive as you might expect. Intel’s Rob Crooke explained, “You could put the cost somewhere between NAND and DRAM.” Products with the new memory are expected to arrive in 2016 and the joint venture is in production with wafers now. Read more of this story at Slashdot.
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Intel and Micron Unveil 3D XPoint Memory, 1000x Speed and Endurance Over Flash
