“Researchers at the University of Wisconsin-Madison are the first to have fabricated carbon nanotube transistors (CNTs) that outperform the current-density of conventional semiconductors like silicon and gallium arsenide, ” reports NanotechWeb. Slashdot reader wasteoid shares the site’s interview with one of the researchers: “When the transistors are turned on to the conductive state (meaning that current is able to pass through the CNT channel) the amount of current traveling through each CNT in the array approaches the fundamental quantum limit, ” he tells nanotechweb.org. “Since the CNTs conduct in parallel, and the packing density and conductance per tube are very high, the overall current density is very high too — at nearly twice that of silicon’s. The result is that these CNT array FETs have a conductance that is seven times higher than any previous reported CNT array field-effect transistor.” The research was funded in part by the U.S. Army and Air Force, as well as the National Science Foundation. “The implication here is that by replacing silicon with a CNT channel, it should be possible for us to make either a higher performing device or one that works at lower power.” In other news, Fujitsu announced this week that it’s joining an effort to release a 256-megabyte 55-nanometer carbon nanotube-based NRAM by 2018. Read more of this story at Slashdot.